DMG5802LFX document number: ds35009 rev. 4 - 2 1 of 6 www.diodes.com december 2012 ? diodes incorporated DMG5802LFX dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 24v 15m ? @ v gs = 4.5v 6.5a 20m ? @ v gs = 2.5v 5.6a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions features ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: w-dfn5020-6 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? weight: 0.03 grams (approximate) ordering information (note 4) part number case packaging DMG5802LFX-7 w-dfn5020-6 3000 / tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 2017 2018 code x y z a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d equivalent circuit top view w-dfn5020-6 esd protected to 3kv me = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) bottom view s1 s1 g1 s2 s2 g2 d1/d2 top view pin-out me ym d1 s1 g1 d2 s2 g2
DMG5802LFX document number: ds35009 rev. 4 - 2 2 of 6 www.diodes.com december 2012 ? diodes incorporated DMG5802LFX maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 24 v gate-source voltage v gss 12 v continuous drain current (note 5) v gs = 4.5v steady state t a = +25c t a = +70c i d 6.5 5.2 a continuous drain current (note 5) v gs = 2.5v steady state t a = +25c t a = +70c i d 5.6 4.5 a pulsed drain current (note 6) i dm 70 a thermal characteristics characteristic symbol max unit power dissipation (note 5) p d 0.98 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 126.5 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 24 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss - - 1.0 a v ds = 24v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.6 0.9 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 11 15 m v gs = 4.5v, i d = 6.5a - 12 17 v gs = 4v, i d = 5.6a - 13 18 v gs = 3.1v, i d = 5.6a - 14 20 v gs = 2.5v, i d = 5.6a forward transfer admittance |y fs | - 17 - s v ds = 5v, i d = 6.5a diode forward voltage v sd - 0.6 0.9 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss - 1066.4 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 132.0 - reverse transfer capacitance c rss - 127.1 - gate resistance r g - 1.47 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge v gs = 4.5v q g - 14.5 - nc v gs = 4.5v, v ds = 15v, i d = 5.8a total gate charge v gs = 10v q g - 31.3 - v gs = 10v, v ds = 15v, i d = 5.8a gate-source charge q g s - 2.0 - gate-drain charge q g d - 3.1 - turn-on delay time t d ( on ) - 3.69 - ns v gs = 10v, v ds = 15v, r l = 2.1 ? , r g = 3 ? turn-on rise time t r - 13.43 - ns turn-off delay time t d ( off ) - 32.18 - ns turn-off fall time t f - 22.45 - ns notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 6. repetitive rating, pulse width limited by junction temperature. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMG5802LFX document number: ds35009 rev. 4 - 2 3 of 6 www.diodes.com december 2012 ? diodes incorporated DMG5802LFX 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds 0 0.01 0.02 0.03 0.04 0.05 048121620 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 2.5v gs v = 1.8v gs 0 0.01 0.02 0.03 0.04 0 5 10 15 20 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.01 0.02 0.03 0.04 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance dson v = 4.5v i = 10a gs d v = 10v i = 20a gs d
DMG5802LFX document number: ds35009 rev. 4 - 2 4 of 6 www.diodes.com december 2012 ? diodes incorporated DMG5802LFX 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd 0 4 8 12 16 20 i, s o u r c e c u r r en t (a) s t = 25c a 04812162024 fig. 9 typical total capacitance v , drain-source voltage (v) ds 10 100 1,000 10,000 c , c a p a c i t an c e (p f ) f = 1mhz c iss c rss c oss 04 812162024 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i , leaka g e c u r r en t (na) dss 10,000 100,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 15v i = 7a ds d
DMG5802LFX document number: ds35009 rev. 4 - 2 5 of 6 www.diodes.com december 2012 ? diodes incorporated DMG5802LFX 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 122c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. w-dfn5020-6 dim min max typ a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? 0.15 b 0.20 0.30 0.25 d 1.90 2.10 2.00 d2 1.40 1.60 1.50 e ? ? 0.50 e 4.90 5.10 5.00 e2 2.80 3.00 2.90 l 0.35 0.65 0.50 z ? ? 0.375 all dimensions in mm dimensions value (in mm) c 0.50 g 0.35 x 0.35 x1 0.90 x2 1.80 y 0.70 y2 1.60 y3 3.20 e d a3 a1 a e d2 e2 l z b pin 1 id y3 x2 x1 y2 xc y g
DMG5802LFX document number: ds35009 rev. 4 - 2 6 of 6 www.diodes.com december 2012 ? diodes incorporated DMG5802LFX important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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